Dynamics and manipulation of ferroelectric domain walls in bismuth ferrite thin films
نویسندگان
چکیده
منابع مشابه
Depletion layers and domain walls in semiconducting ferroelectric thin films.
Commonly used ferroelectric perovskites are also wide-band-gap semiconductors. In such materials, the polarization and the space-charge distribution are intimately coupled, and this Letter studies them simultaneously with no a priori ansatz on either. In particular, we study the structure of domain walls and the depletion layers that form at the metal-ferroelectric interfaces. We find the coupl...
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Charged domain walls in ferroelectric materials are of high interest due to their potential use in nanoelectronic devices. While previous approaches have utilized complex scanning probe techniques or frustrative poling here we show the creation of charged domain walls in ferroelectric thin films during simple polarization switching using either a conductive probe tip or patterned top electrodes...
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The role of oxygen vacancies in fatigue and dielectric breakdown has been a topic of intense research in ferroelectric perovskites like BaTiO3. This paper presents a comprehensive model that treats the ferroelectrics as polarizable wide band-gap semiconductors where the oxygen vacancies act as donors. First, a fully coupled nonlinear model is developed with space charges, polarization, electric...
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ژورنال
عنوان ژورنال: National Science Review
سال: 2019
ISSN: 2095-5138,2053-714X
DOI: 10.1093/nsr/nwz176