Dynamics and manipulation of ferroelectric domain walls in bismuth ferrite thin films

نویسندگان
چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Depletion layers and domain walls in semiconducting ferroelectric thin films.

Commonly used ferroelectric perovskites are also wide-band-gap semiconductors. In such materials, the polarization and the space-charge distribution are intimately coupled, and this Letter studies them simultaneously with no a priori ansatz on either. In particular, we study the structure of domain walls and the depletion layers that form at the metal-ferroelectric interfaces. We find the coupl...

متن کامل

Microwave a.c. conductivity of domain walls in ferroelectric thin films

Ferroelectric domain walls are of great interest as elementary building blocks for future electronic devices due to their intrinsic few-nanometre width, multifunctional properties and field-controlled topology. To realize the electronic functions, domain walls are required to be electrically conducting and addressable non-destructively. However, these properties have been elusive because conduc...

متن کامل

Controlled creation and displacement of charged domain walls in ferroelectric thin films

Charged domain walls in ferroelectric materials are of high interest due to their potential use in nanoelectronic devices. While previous approaches have utilized complex scanning probe techniques or frustrative poling here we show the creation of charged domain walls in ferroelectric thin films during simple polarization switching using either a conductive probe tip or patterned top electrodes...

متن کامل

Interaction of oxygen vacancies with domain walls and its impact on fatigue in ferroelectric thin films

The role of oxygen vacancies in fatigue and dielectric breakdown has been a topic of intense research in ferroelectric perovskites like BaTiO3. This paper presents a comprehensive model that treats the ferroelectrics as polarizable wide band-gap semiconductors where the oxygen vacancies act as donors. First, a fully coupled nonlinear model is developed with space charges, polarization, electric...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: National Science Review

سال: 2019

ISSN: 2095-5138,2053-714X

DOI: 10.1093/nsr/nwz176